节点文献
CdTe薄膜的制备方法比较及其结构性能研究
Comparison of CdTe thin films preparation methods and study of struture property
【摘要】 采用真空热蒸发VE、射频溅射沉积RF和近距离升华CSS技术制备CdTe薄膜 ,并对其进行掺杂研究。样品利用XRD、SEM、紫外 可见分光光度计和霍尔系数测量系统进行测试。结果显示 ,CSS制备的CdTe薄膜与VE和RF法制备的薄膜相比 ,晶粒大 ,晶形好。适当的掺杂某些元素 ,适当的掺杂量 ,可以改善CdTe薄膜的结晶性能 ,提高其导电性能。掺杂对CdTe薄膜的光能隙影响不大。
【Abstract】 In this paper CdTe and doping CdTe thin films have been prepared by vacuum evaporation(VE)?RF sputtering and close spaced sublimation(CSS)technique. Experimental results have been studied by XRD?SEM?UV and HALL mesurement. The results show that the films deposited by CSS have larger crystalline grain and better appearance than the films prepared by VE?RF. Proper doping some elements and proper doping quantity can improve crystallization and conductivity properties of CdTe thin films . Doping has a little influence on Eg of CdTe thin films.
- 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2002年05期
- 【分类号】TB43
- 【被引频次】20
- 【下载频次】493