【摘要】 采用射频磁控共溅射方法制备了纳米Ge颗粒尺寸的Ge SiO2 薄膜、非晶Si SiO2 薄膜和非晶AlSiO复合薄膜 ,分析了样品的结构 ,研究发现 3类样品均存在较强的光吸收 ,对于Ge SiO2 薄膜观察到光吸收边随Ge颗粒尺寸变小而蓝移的现象 ,这主要是由于Ge颗粒的量子限域效应所引起的。而对于非晶样品也出现了光吸收边蓝移和能隙展宽的现象 ,这可能是由于样品中的杂质或缺陷等受到限域作用的结果更多还原

【Abstract】 The composite films of Ge SiO 2,Si SiO 2 and AlSiO films were prepared by rf co sputtering method from a composite target in argon atmosphere. The structure of the films was studied by the aid of TEM and XRD. Quantum confinement effect was observed in the films by measurements of absorption spectrum of Ge SiO 2 films. The widening of optical band gap of the amorphous films seems to be related to the function of the quantum confinement on the impurities or defects in the films.更多还原