【摘要】 采用模拟计算 ,结合实验数据 ,初步设计了通过 Ga As隧道结联接的 6 5 0 nm/ 780 nm双波长多量子阱 (MQW)激光器。分别对 6 5 0 nm、780 nm MQW有源区部分进行模拟 ,计算得出激光器的横向模式特性、近场分布和远场发散角。对激光器折射率导引结构侧向模式进行了定性分析 ,得出实现理想侧模的条件更多还原

【Abstract】 nm/780 nm double wavelength multiquantum well(MQW) lasers combined by GaAs tunnel junction were designed through simulation and previous experiment data.The parts of 650 nm/780 nm multiquantum well active regions were simulated by computer.Lasers’ transverse mode characteristic,near field distribution and far field angle were calculated.The lateral mode of lasers with refractive index structure were qualitative analyzed,the conditions of perfect lateral mode were found.更多还原