【摘要】 利用等离子体增强MOCVD法生长出 ZnO薄膜，用X射线衍射谱观察到位于 2θ34．56°处（0002）的衍射峰，表明ZnO沿c方向呈柱状生长．通过荧光光谱，观察到来自于激子的高强度的近带边紫外光发射（375um）．紫外发射光强度与深能级复合发射光强度比高达 193，显示出材料的高质量，并通过原子力显微镜加以验证．为了实现高阻ZnO薄膜，利用高温富氧分段退火和用N2 气进行掺氮两种方法生长高阻ZnO薄膜．结果表明，电阻率由0．65 Ω·cm分别升高到1100 Ω·cm（分段退火）和5×104Ω·cm（掺氮）．进一步比较发现，掺氮的样品不仅电阻率高，而且光荧光特性好，显示出更高的薄膜质量．更多还原

【Abstract】 Abstract The growth of ZnO film by plasma-assisted MOCVD was reported in this atricle. From X-ray diffraction spectrum, the intensity of (0002) peak at 2 =34. 56?was high, indicating a c-axis orientation perpendicular to the substrate surface in ZnO. Ultraviolet(UV) emission with a high intensity at 375 nm was attributed to the excitation emission from photoluminescence (PL) spectrum. In PL spectrum, we also found green emission with a low intensity and wide FWHM. This green emission came from deep level transition due to defect levels in ZnO film. The ratio of the intensity of UV emission to that of green emission was as high as 193, indicating a high quality of the samples. This high quality was also confirmed by Atomic Force Microscope (AFM) analysis. Two methods were used in order to get ZnO film with a high resistivity. One was annealing ZnO film every ten minutes under relative high pressure of oxygen (O2) at 700 , the other was N-doping by N2. ZnO film with a high resistivity was successfully prepared. The resistivity was 5 104 ?cm and 1 100 ?cm, respectively, while that of untreated sample was as low as 0. 65 ?cm. Furthermore, N-doped sample had a higher resistivity and better photoluminescence properties than that of the sample obtained by annealing under oxygen.更多还原