【摘要】 用背散射 /沟道、溅射剥层 /背散射和二次离子质谱方法分析了分子束外延生长的Si/GexSi1-x多层膜 .由 2MeV 4He+ 离子背散射 /沟道分析 ,确定了外延生长薄膜的厚度、组分和晶格结构的完美性 ;用低能Ar+ 离子溅射剥层 ,减薄样品外延层厚度后 ,再做背散射分析 ,可获得有关较深层薄膜与基体界面和溅射剥层的信息 ;二次离子质谱分析清晰地显示出溅射剥层前后样品的交替层周期性结构更多还原

【Abstract】 RBS/Channeling,Sputtering/RBS and SIMS analysis have been performed on the MBE grown Si/Ge x Si 1- x multilayer.The thickness,atomic ratio and crystalline perfectness of the epitaxial layer are determined by 2 MeV 4He + RBS/Channeling analysis.By sputter etching of the sample with low energy Ar + ions,the thickness of epitaxial layer is reduced.Then RBS analysis of 2 MeV 4He + ions on the etched sample yields information about the deeper layers, the interface of the multilayer samples and the concerned phenomena induced by sputter etching.The periodical structure of Si/Ge x Si 1- x multilayer samples is clearly identified by the SIMS analysis before and after sputter etching.更多还原