【摘要】 报道了用热蒸发Al作肖特基接触在SiC材料上制作肖特基二极管的工艺过程和器件特性。采用射频溅射法在Si(111)衬底上生长SiC薄膜。I-V特性测量说明Al/SiCSBD有较好的整流特性 ,热电子发射是其主要的输运机理。反向击穿电压为 2 2 .5V ,理想因子为 1.19,肖特基势垒高度为 1.4 8eV。更多还原

【Abstract】 This paper describes the fabrication and characteristics of the Schottky barrier diodes using thermal evaporation of Al on SiC. The SiC layers are grown on Si(111) substrates by radio frequency sputtering. Measurements of the I-V characteristics of these diodes show the devices have good rectifying property and thermionic emission current is the dominant conduction mechanism for these Schottky contacts. The ideal factor is 1.19 and barrier height is 1.48eV, respectively.更多还原