【摘要】 采用离子束溅射法，在单晶Si（100）基片上制备CN薄膜。研究了基片温度对CN薄膜性能和结构的影响。结果表明：随着基片温度的提高，薄膜生长致密，表面光滑；薄膜硬度逐渐提高，但温度升高到200℃后，硬度增加缓慢。同时，基片温度升高使薄膜中的N含量增加，促进C-N化合物结晶。X射线衍射结果证明在850℃时，薄膜中产生－C3N4晶相。更多还原

【Abstract】 CN films have been prepared on Si(100) substrates by using ion beam sputtering. The effect of substrate temperature on the proper ties and structures of CN films has been studied. The results show tha t the films turn to be dense and smooth with the increasing of substra te temperature. But the hardness of the films increases slowly when th e temperature exceeds 200℃. Meanwhile, higher temperature of the subs trate enhances the N concentrate in the CN films, and promotes the cry stallization of the C-N compounds. The results of XRD of the CN films confirm the formation of －C3N4 phase in the CN films at the temperatu re of 850℃.更多还原