【摘要】 研究了先用 Murakami剂浸蚀 WC相、再用 (H2 O2 +H2 SO4 )酸混合液除去 Co相的 2步法浸蚀 YG6硬质合金基体表面预处理的过程 ;并在浸蚀过的硬质合金基体上 ,用热丝法沉积了金刚石薄膜。结果表明 :2步浸蚀法可在基体表面深度为 6 μm～ 12 μm的范围内 ,使 Co含量从 6 %降低到 0 .5 4 %～ 3.2 2 % ,并使硬质合金基体的表面粗糙度增加到 Ra=1.0 μm,但会导致硬质合金基体表面的硬度从 89.9HRA降低至 88.1HRA;在该硬质合金基体沉积金刚石薄膜之后 ,发现金刚石薄膜试样的组织结构具有明显的 { 111}面取向 ,金刚石涂层与硬质合金基体具有较高的粘结强度。更多还原

【Abstract】 A two steps method of etching pretreatment on YG6 grade carbide substrate was investigated in this work: the first step, using Murakami reagent for 5～15 min prior to HF CVD to etching WC phase; the second step, using the solution of H 2O 2∶H 2SO 4=7∶3 for 10～25 min to remove the Co phase. The results show that to Co content of the substrate surfaces could be reduced from 6% to 0.54%～3.22% within the etching depth of 6～12 μm, the substrate surface roughness R a was increased up to 1.0 μm, as well as, the substrates hardness was decreased from 89.9 HRA to 88.1 HRA after etching. A slight preference towards {111} orientation can be observed from the XRD patterns and SEM micrograph of the diamond film on WC 6% Co sample. The indentation testing shows that a good adhesion between the diamond film and the substrate after HF CVD could be obtained.更多还原