【摘要】 用真空蒸发法在玻璃和单晶硅片上制备纯Zn和掺杂Zn薄膜 ,然后在高于 4 5 0℃条件下进行氧化、热处理 (玻璃衬底 )获得良好的纳米ZnO薄膜和掺杂ZnO薄膜。对单晶硅衬底上制备的纯Zn薄膜在高于 80 0℃温度条件下进行液态源掺杂 ,获得掺B和P纳米ZnO薄膜。实验表明 ,掺杂和热处理使纳米ZnO薄膜的结构、导电性能得到改善 ,有效地降低了纳米ZnO薄膜的电阻 ,同时薄膜的气敏特性也得到较大的改善更多还原

【Abstract】 Zn thin films and impurity dopped films were prepared by vacuum evaporation on glass and silicon substrates to obtain the nanon ZnO films on the oxidize and heat treatment over 450?℃ in O 2(glass substrates).The nanon ZnO films dopped B and P have been obtained on silicon substrate over diffusing temperature 800?℃ by liquid doping.The results show that the structure and electrical characteristics of the nanon ZnO films are improved by heat treatment and doping.The resistance of nanon ZnO films can be reduced obrionsly and the gas sensitive characteristics can be improved.更多还原