【摘要】 通过采用时域有限差分方法 (FDTD)和混合算法处理半导体器件所满足的刚性、耦合、非线性偏微分方程组 ,建立PN结半导体器件在高功率微波 (HightPowerMicrowave)激励下瞬态响应的一维模型 ,并在此基础上进行二极管功率耗散情况的分析和对微波信号响应截止频率的计算 ,从而对PN结半导体在高功率微波激励下的损伤机理进行研究 .计算表明 ,二极管功率耗散主要集中在源电压正半周峰值附近 ,器件的热击穿应发生在信号的正半周期内 ,10GHz应可视为该二极管对微波信号响应的截止频率更多还原

【Abstract】 The Finite Difference Time Domain (FDTD) Method was used to line the semiconductor operation’s equations, which were stiff, coupled, nonlinear and partial differential. Based on these, one-dimensional PN junction transient operation of semiconductor devices was set up, the power dissipation and the close frequency under HPM have been calculated, and then the mechanism of demagnification can be studied. From the result, the power dissipation mainly in the time of positive period,Which was the time of heat break down, 10GHz was the close frequency.更多还原