【摘要】 以ＧａＮ和（Ｇａ１－ｘＩｎｘ）Ｐ半导体的金属有机物气相外延生长（ＭＯＶＰＥ）为例分析了Ｖ族气源物质ＮＨ３和ＰＨ３热分解对半导体化合物外延生长成分空间的影响．根据外延生长过程中ＮＨ３和ＰＨ３实际分解状况，建立了气源物质不同分解状态下的热力学模型，进而应用Ｔｈｅｒｍｏ－ｃａｌｃ软件计算出与之对应的成分空间．计算结果与实验数据的对比表明：ＧａＮ和（Ｇａ１－ｘＩｎｘ）Ｐ半导体的ＭＯＶＰＥ过程的热力学分析必须根据Ｖ族气源物质ＮＨ３和ＰＨ３的实际热分解状况，进行完全平衡或限定平衡条件下的计算和预测，完全的热力学平衡分析仅适用于特定的温度区段或经特殊气源预处理的工艺过程．更多还原

【Abstract】 Taking the Metal-Organic Vapor Phase Epitaxy (MOVPE) of GaN and (Ga1-xInx)P semicon- ductors as examples, the pyrolysis effect of NH3 and PH3 vapor sources on the composition spaces for growing GaN and(Ga1-xInx)P compounds has been studied. According to the situation of NH3 and PH3 pyrolysis in ex- perimental conditions, the thermodynamic models for different pyrolysis status are built. Furthermore, the composition spaces for growing Ⅲ－Ⅴ semiconductors are calculated and predicted with the aid of the Thermo- calc software. The correspondence of the theoretical analysis with the experimental data indicates that for the thermodynamic analysis of MOVPE process of GaN and (Ga1-xInx)P semiconductors, the calculation and pre- diction must be conducted under the conditions of the complete equilibrium or the constraint equilibrium based on the practical pyrolysis of NH3 and PH3 vapor sources. The analysis of the complete thermodynamic equi- librium is only applied to some specific temperature region or certain epitaxy process after typical pretreatment of vapor sources.更多还原