【摘要】 设计和制备了λ=680 nm的红色AlGaInP/GaInP应变量子阱激光器.制得的未镀膜20μm脊型条形红色激光器的输出功率达到100 mW,斜率效率0.56W/A,垂直和平行远场发散角分别为31°和9°.未镀膜4μm深腐蚀器件的功率可达10 mW,斜率效率为 0.4 W/A,峰值波长为681 nm,峰值半宽为0.5nm.不同腔长器件的特性显示器件的内损耗为4.27/cm,内量子效率达45％.对不同腔长的器件进行了变温测试,得到器件的特征温度为120～190 K.更多还原

【Abstract】 AlGalnP/ GalnP strained Quantum well laser device emitting at about 680 nm wavelength has been fabricated and analyzed. Slope efficiency of 0.56 W/A and strip red output power as high as 100 mW, vertical and parallel far field divergence angle of 31° and 9° respectively are obtained for 20 μm ridge laser device without coating. For a 4 μm uncoated deep eroded laser device, the slope efficiency is 0.4 W/A, the output power about 10 mW, the peak wavelength 681 nm and the width 0.5 nm. The characteristic temperature is between 120-190 K for the device of different cavity length. The total internal losses of those devices arc 4.27/ cm, the internal quantum efficiency is 45%.更多还原