【摘要】 采用高真空 MOCVD外延技术 ,利用 TMA( Al( CH3) 3)和 O2 作为反应源 ,在 Si( 10 0 )衬底上外延生长γ-Al2 O3 绝缘膜形成 γ-Al2 O3/ Si异质结构材料 .同时 ,引入外延后退火工艺以便改善 γ-Al2 O3 薄膜的晶体质量及电学性能 .测试结果表明 ,通过在 O2 常压下的退火工艺可以有效地消除γ-Al2 O3 外延层的残余热应力及孪晶缺陷 ,改善外延层的晶体质量 ,同时可以提高 MOS电容的抗击穿能力 ,降低漏电电流更多还原

【Abstract】 Using TMA(Al(CH 3) 3)and O 2 as the sources,γ Al 2O 3 films are grown on Si (100) substrates by high vacuum metal organic chemical vapour deposition.Sequentially,the γ Al 2O 3 films are annealed in O 2 atmosphere at 1000℃.The films are characterised by X ray diffraction (XRD),reflect high energy electron diffraction (RHEED).Meanwhile,the leakage current of γ Al 2O 3 films is also measured.The results indicate that the crystalline quality and dielectricity of γ Al 2O 3 films are improved after being annealed in O 2 atmosphere.更多还原