【摘要】 利用喇曼光谱和光致发光谱 ,对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .结果发现C3H8流量的增加导致载流子浓度的升高 ,喇曼谱出现蓝移 ,E1(LO)声子的Raman强度变弱 .同时光致发光谱中蓝光带和黄光带发光强度随着掺碳浓度的增加先增强后减弱 ,这与掺杂碳的自补偿效应有关 .高碳掺杂量的GaN材料的结构与光学性质均显著下降 .更多还原

【Abstract】 Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE).The surface carrier concentration becomes higher with the the augment of the C 3H 8 flow,which cause the Raman spectra shifting to high energy and the E 1(LO) mode becoming more feeble.The photoluminescence intensity with the C 3H 8 flow is ascribed to the effect of self compensating of the carbon dopants.High concentration of the dopant destroys the lattice of crystal and varies the optical properties essentially.更多还原