【摘要】 报道了栅长为 1.5 μm Au- Al Ga N/ Ga N HFET器件的研制和器件的室温特性测试结果 .同时 ,研究了器件经30 0℃、30 min热处理对器件性能的影响 ,并对比了热处理前后器件的室温特性 .实验证明 :室温下 ,器件具有良好的输出特性和肖特基结伏安特性 ,反向漏电流较小 ,最大跨导可达 47m S/ mm;经过 30 0℃、30 m in热处理后器件的室温输出特性有显著改善 ,而且器件饱和压降明显降低 ,说明 30 0℃热处理没有给器件造成不可恢复的破坏更多还原

【Abstract】 Au- Al Ga N/ Ga N heterostructure field effecttransistor(HFET) with1.5 μm gate is fabricated successfully.The per- formance of Au- Al Ga N/ Ga N HFET at room temperature before heat treatm ent is measured and contrasted with that after heat treatment at30 0℃ for30 min.The device exhibited an excellent source- drain current- voltage characteristics and a low re- verse drain current,and its maxim um transcondutance is47m S/ m m atroom temperature.After treated for30 m in at30 0℃ ,the perform ance of the device at room temperature is im proved and there is an obvious decreasing for the saturation voltage.更多还原