【摘要】 利用红外吸收 (IR)谱和 X射线光电子谱 (XPS)对富氧氮氧化硅 (oxygen- rich Si Ox Ny)及其在 6 0 0、75 0和90 0℃下退火后样品的微结构进行了研究 .实验中除观察到 N、H的释放外 ,首次发现退火会导致 Si Ox Ny 中 O的释放 ,同时还发现退火温度不同 ,H、O、N元素的释放量以及微结构的变化都不相同 ,根据这些现象 ,提出了 5个化学反应过程并予以解释更多还原

【Abstract】 Annealing behavior for oxygen- rich silicon oxynitride samples at6 0 0 ,75 0 and90 0℃ are described by infrared spec- troscopy and X- photoelectron spectroscopy.In addition to the release of N and H,the dissociation of oxygen is observed for the first time.The release quantities of N,H and O and the changes of microstructure are different after different temperature an- nealing.Five chem ical procedures are proposed to interpret these observations.更多还原