【摘要】 中子辐照区熔 (氢 )硅片经退火后在近表面形成洁净区 ,在硅片内部形成体内微缺陷 .微缺陷的形成与中子辐照造成的损伤及单晶硅内氢杂质的催化加速有关 ,还与后续退火条件有关 .第一步退火的温度对微缺陷的尺度有很大的影响 ,中低温要比高温所形成的微缺陷小 .在退火过程中微缺陷有一个生长过程 ,110 0℃退火 2 h微缺陷已达最大 .硅片表面的粗糙度影响表面洁净区的形成 ,洁净区出现在未抛光面 ,双面抛光硅片不会形成表面洁净区 .更多还原

【Abstract】 A denuded zone and bulk m icro- defects are described in the floating zone silicon grown in hydrogen am bience and ir- radiated with neutrons.The formation of m icro- defects is associated with the damage of neutron transmutation doping,the cat- alyzing of hydrogen and the conditions of annealing.The first- step annealing tem perature has big influence on the size of the defects.The higher temperature of the first- step annealing,the bigger the size of the defects.During annealing the defects have a course of growing,which will becom e the biggest size after annealing at110 0℃ for2 h.The quality of the silicon wafer has big influence on the formation of denuded zone which always lies in non- polished side and the denuded zone has not been found on the surface in the both- side polished silicon wafer after the annealing.更多还原