【摘要】 研究了 p型含氮以及不含氮直拉 (CZ)硅中热施主 (TD)以及氮氧 (N- O)复合体的电学性质 .硅片在 35 0～85 0℃范围进行不同时间的退火后 ,利用四探针和通过室温傅里叶红外光谱 (FTIR)分别测量其载流子浓度和间隙氧浓度的变化 .实验结果表明 :p型含氮直拉硅 (NCZ)中热施主的电学特性基本与 n型 NCZ硅相同 ,但 N- O复合体的消除温度明显低于 n型 NCZ硅 ,这是由于 p型 NCZ硅中硼促进了 N- O复合体的消除更多还原

【Abstract】 The electrical behaviors of thermal donors and nitrogen- oxygen complexes in p- type CZ silicon are studied point.Af- ter the annealing of silicon in different cycles,the resistivities and the concentrations of oxygen are m easured by the four- point probe and by a Fourier transmission infrared spectrom eter(FTIR) at room temperature at wave num ber of110 7cm- 1 .It is demonstrated that the electrical characteristic of the thermal donor in p- type nitrogen- doped CZ silicon is the sam e as that in n- type nitrogen- doped CZ silicon.However,the elimination temperature of N- O complexes in p- type nitrogen- doped CZ silicon is lower than that in n- type nitrogen- doped CZ silicon.Itis suggested that boron enhances the dissociation of nitrogen- oxygen com plexes in p- type nitrogen- doped CZ silicon.更多还原