【摘要】 提出了一种用常规硅工艺实现的片上集成电感的螺线型新结构 .制造工艺使用标准双层金属布线的常规硅工艺 .测量了螺线型集成电感的 S参数 ,从测量数据计算了集成电感的参量 .实验的侧向螺线型片上集成电感的 Q值峰值为 1.3,电感量为 2 .2 n H.对用两层金属层实现的侧向螺线型片上集成电感和单层金属的常规平面螺旋电感的实验结果进行了比较 ,电感量和 Q值与常规平面螺旋电感有可比性更多还原

【Abstract】 A new structure of the on- chip integrated inductors im plem ented in conventional Si process is presented as a lateral solenoid.The fabrication process utilizes a conventional Si technology with standard double- layer m etal- lization.S param eters of the inductors based equivalent circuit are investigated and the inductor parameters are cal- culated from the m easured data.Experimental results are presented on an integrated inductors fabricated in a lateral solenoid type utilizing double m etal layers rather than a single metal layer as used in conventional planar spiral de- vices.Inductors with peak Q of 1.3and inductance value of 2 .2 n H are presented,which are com parable to conven- tional planar spiral inductors.更多还原