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集成电路工艺模拟中的离子注入设备模型研究

Research of Model for Ion Implantation Equipment in Integrated Circuit Technology Simulation

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【作者】 李煜李瑞伟王纪民

【Author】 Li Yu,Li Ruiwei and Wang Jimin(Institute of Microelectronics,Tsinghua University,Beijing 100084,China)

【机构】 清华大学微电子学研究所清华大学微电子学研究所 北京100084北京100084北京100084

【摘要】 以离子注入工艺为例 ,通过研究沟道效应对离子注入工艺的影响 ,提出了建立设备模型的必要性 ,并进行了离子注入设备模型的初步研究

【Abstract】 With the rapid development in the process of integrated circuits,the function of the process simulation software has been improved constantly,but its shortcoming appears increasingly.The influence of equipment on the process has not been counted in.In order to promote the improvement of this situation,it is necessary to establish an equipment model in process simulation.Taking the process of ion implantation as an example,some elementary research on ion implantation equipment model considering the influence of the channeling effects on the process is accomplished.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2002年03期
  • 【分类号】TN405
  • 【被引频次】2
  • 【下载频次】158
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