【摘要】 利用低能双离子束外延技术 ,在 4 0 0℃条件下生长样品 (Ga,Mn,As) / Ga As.样品光致发光谱出现三个峰 ,即1.5 0 4 2 e V处的 Ga As激子峰、1.4 875 e V处的弱碳峰和低能侧的一宽发光带 .宽发光带的中心位置在 1.35 e V附近 ,半宽约 0 .1e V.在 84 0℃条件下对样品进行退火处理 ,退火后的谱结构类似退火前 ,但激子峰和碳杂质峰的峰位分别移至 1.5 0 6 5 e V和 1.4 894 e V,同时低能侧的宽发光带的强度大大增加 .这一宽发射带的来源还不清楚 ,原因可能是体内杂质和缺陷形成杂质带 ,生成 Mn2 As新相 ,Mn占 Ga位或形成 Ga Mn As合金更多还原

【Abstract】 Ga,Mn,As)/GaAs are obtained by mass analyzed low energy dual ion beam epitaxy technique with Mn ion energy of 1000eV and a dose of 1 5×10 18 /cm 2 at the substrate temperature of 400℃.The photoluminescence measurement of the as grown sample shows that the GaAs exciton peak at 1 5042eV,a carbon induced peak at 1 4875eV,and a broad emission band near 1 35eV with the halfwidth of 0 1eV are observed.After annealing at 840℃,the 1 5042eV peak and 1 4875eV peak shift to 1 5065eV and 1 4894eV respectively.The photoluminescence intensity of the 1 35eV band increases greatly after annealing.The 1 35eV emission band may be attributed to one or several of the impurity and defect band,Mn 2As phase,Mn at a Ga site and the alloy GaMnAs.更多还原