【摘要】 介绍了特大规模集成电路(ULSI)硅衬底的化学机械抛光工艺。对抛光机理、影响抛光速率和抛光质量的因素、抛光液中的成份特别是精抛液中的有机碱和活性剂的选择作了讨论分析,另外对抛光中出现的一些问题及解决方法进行了分析研究。更多还原

【Abstract】 Chemomechanical polishing(CMP)technology of silicon substrate inULSI is introduced in this paper. The mechanism of silicon polishing, some factors thatinfluence polishing rate and quality, choice of components in the slurry, specially organicalkali and surfactant in final polishing slurry are discussed. Besides some problems existedin polishing and the ways to solve the problems are analyzed.更多还原