【摘要】 在一定的边界条件近似下,通过联立求解泊松和薛定谔方程,利用电荷控制模型对赝型高电子迁移率器件( p-HEMT)进行了模拟,分析了器件中二维电子气的面密度ns、d面掺杂层距离表面层厚度d1和距离二维电子气厚度d2对器件特性的影响,并讨论了这些结构参数的优化,为制备高温、稳定和有应用前景的单电子晶体管器件提供了依据。更多还原

【Abstract】 By self-consistently solving the Poisson equation and Schrodinger equationunder the boundary condition, the output characteristics of the p-HEMT is simulated withcharge control model. The dependence of the output characteristics are analyzed on the electrondensity ns ,the distance between the doped layer and the surface d1 and the distance between theundoped layer and the 2DEG d2 respectively. The parameters are optimized in order tofabricate high-temperature stable single-electron transistors with potential applications.更多还原