【摘要】 制作小功率半导体激光器时 ,为了减小阈值电流 ,提高斜率效率 ,一般都采用深腐蚀法形成脊形结构以克服电流横向扩展。但是由于工艺的原因 ,往往使得激光器远场特性恶化 ,特别是水平发散角θ//形成多瓣。研究发现这与光刻工艺有着重要关系 ,并利用自对准自然解理边形成TiAu欧姆接触方法克服了此现象 ,改善了远场特性。更多还原

【Abstract】 A deep etching technique is usually used for the fabrication of low-power semicon ductor lasedrs to reduce threshold current,increase slope and prevent the current from spreading on horizontal direction.However,it wiu degenerate the far field properties of the laser,because of the fabrication technology.It is found that the ar field properties can be improved by proper photo-lithography.更多还原