【摘要】 这篇文章提出了高压LDMOS的高温等效电路,并在此基础上讨论了LDMOS泄漏电流及其本征参数在25℃-300℃范围内随温度变化规律。根据本文分析,漏pn结的反向泄漏电流决定了LD-MOS的高温及限温度,导通电阻与温度的关系是(T)Z(Z=1.5～2.5)。更多还原

【Abstract】 The paper gives the equivalent circuit of a high voltage LDMOS at very high temperatures,and analyzes performance of leakage current and intrinsic parameters for LDMOS from 25℃to 300℃. It may be concluded that the maxicmal applied temperature of a drain and the erlationship between on-resistance and temperature is<IMG SRC="IMAGE/06120048.JPG" HEIGHT=24 WIDTH=113>.更多还原