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钝化多孔硅光致发光谱的时间演化特性
Time Evolution of Photoluminescence of Different Passivated Porous Silicon
【摘要】 通过改变溶液的组成成份 ,用水热腐蚀技术原位制备出具有不同表面钝化状况的四类多孔硅样品 .将上述样品室温下存放于空气中 ,其光致发光谱的时间演化特性差异很大 .其中 ,氢钝化多孔硅的发光强度衰减最快 ,峰位蓝移量也最大 ,而铁钝化多孔硅的发光强度和峰位则几乎不发生变化 .红外吸收谱实验揭示出这种差异可能来源于样品表面钝化成份的不同 .此发现为一步原位制取具有稳定发光性能的多孔硅提供了新的思路
【Abstract】 Through varying the components of the hydrothermal solution,four kinds of PS ( porous silicon ) are prepared by the hydrothermal method. The evolution of their PL ( photoluminescence) spectra with the storing time exhibits different properties:the hydrogen- passivated PSperforms fast PL degradation and big blue shift of PL peak wavelength while the iron- passivated PS keeps almost unchanged.The infrared absorption measurements indicates that the spectroscopic difference might originate from the difference of the surface-passivation.This result provides a new approach for obtaining porous silicon with stable photoluminescence.
- 【文献出处】 郑州大学学报(自然科学版) ,Journal of Zhengzhuou University (Natural Science Edition) , 编辑部邮箱 ,2001年01期
- 【分类号】O472.3;TB383
- 【被引频次】1
- 【下载频次】45