【摘要】 利用质量分离的低能双离子束外延技术 ,得到了 (Ga ,Mn ,As)化合物。衬底温度 5 2 3K条件下生长的样品的俄歇电子谱表明 ,一部分锰淀积在GaAs的表面形成一层厚度约为 3 0nm的外延层 ,另一部分锰离子成功注入到GaAs基底里 ,注入深度约为 160nm。衬底温度为 5 2 3K时获得了Ga5.2 Mn相 ,衬底温度为 673K时获得了Ga5.2 Mn、Ga5Mn8和Mn3 Ga相。在 1113K条件下对 673K生长的样品进行退火 ,退火后样品中原有的Mn3 Ga消失 ,Ga5Mn8峰减弱趋于消失 ,Ga5.2 Mn仍然存在而且结晶更好 ,并出现Mn2 As新相更多还原

【Abstract】 By mass analyzed low energy dual ion beam epitaxy technique, the (Ga,Mn,As) compounds were obtained. Auger electron spectroscopy spectra of the sample grown at 523K show that some of Mn ions deposited on single crystal GaAs substrate form a 30nm thick epilayer, and the other Mn ions successfully implant into GaAs substrate and the depth of implantation is 160 nm. Ga 5.2 Mn is obtained at the substate temperature of 523K. Ga 5.2 Mn,Ga 5Mn 8 and Mn 3Ga is obtained at the substrate temperature of 673K. The sample grown at 673K is annealed at 1113K. In this annealed sample Mn 3Ga disappear, Ga 5Mn 8 tended to disappear, Ga 5.2 Mn crystallize better and new phase of Mn 5.2 As is generated.更多还原