【摘要】 利用椭偏仪、荧光光谱和X光电子谱研究了Si1-x -yGexCy合金在 90 0℃干O2 气氛下所形成的氧化物的生长动力学及其光学特性。结果表明 :随着合金中碳含量的增加 ,氧化速率逐渐下降 ;而氧化物中 383nm附近的发光带是由于氧化薄膜中与 (SixGe1-x)O2 有关的缺陷引起的更多还原

【Abstract】 The oxidation kinetics and the optical properties of SiO 2/Si 1- x-y Ge x C y system grown on silicon substrate by ultra high vacuum chemical vapor deposition,at a temperature of 900 ℃ in dry oxygen atmosphere,were studied with ellipsometry(EL),photoluminescen(PL)and X ray photoelectron spectroscopy (XPS).EL data show that the oxidation rate decreases with the increase of carbon concentration.PL and XPS results reveal that the 383 nm band originates from the defects associated with(Si x Ge l- x )O 2 in the oxidized films.更多还原