【摘要】 以氮气为反应气体 ,用真空阴极电弧沉积法沉积了CNx膜 ,并利用金相显微镜、Auger电子谱仪、FTIR及XRD对其进了分析。结果表明 :真空阴极电弧沉积法可以制备含N量高、具有C≡N键和C—N键并含有晶态C3N4的CNx膜更多还原

【Abstract】 CN x films were fabricated with nitrogen as reactive gas by vacuum cathodic arc deposition;The films were analyzed by optical microscope,Auger electron spectroscopy (AES),Fourier transform infrared spectroscopy(FTIR) and X ray diffraction (XRD).The results showed that the CN x film with high nitrogen content,C≡N and C—N bond and crystalline C 3N 4 can be fabricated by vacuum cathodic arc deposition.更多还原