【摘要】 用超高真空化学气相沉积方法 ,在Si(10 0 )衬底上生长掺C高达 2 2 %的Si1-x-yGexCy 合金薄膜 ,外延层质量良好。用高分辨透射电子显微镜 ,X射线衍射 ,傅立叶红外吸收光谱以及拉曼光谱对外延层进行了检测。结果表明 :替代位C的加入 ,明显缓解了宏观上的应变 ,但在合金中仍存在着微观应变。更多还原

【Abstract】 High quality Si 1-x-y Ge x C y alloy with 2.2% C is grown at a relatively high temperature(760 ℃)on Si(100) wafer substrates using Ultra high Vacuum/Chemical Vapor Deposition(UHV/CVD).The samples are studied with high resolution cross sectional transmission electron microscope(HRTEM),X ray diffraction(XRD),Fourier transform infrared spectroscopy and Raman spectroscopy.Our results suggest that the macroscopic strain in Si 1-x-y Ge x C y epilayer can be relieved by adding small amounts of carbon,however,the layer still contains large microscopic strain.更多还原