【摘要】 采用溶胶 -凝胶 ( Sol- Gel)法制备了 PZT薄膜 ,在 60 0°C的退火温度下即获得了晶化完善的钙钛矿铁电相结构。采用典型的半导体光刻工艺 ,利用 HCl/ HF刻蚀溶液成功地获得刻蚀线条分辨率达微米量级的 PZT薄膜微图形。较好的解决了有关 PZT薄膜制备与加工中存在的关键问题 ,为硅基铁电薄膜器件的实现奠定了良好的工艺基础。更多还原

【Abstract】 Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a Sol-Gel methodIt was shown that the PZT thin films had perfect perovskite ferroelectric structure at annealing temperature of 600 °C by X-ray diffraction analysis (XRD)PZT thin films were chemically etched using HCl/HF solution after typical semiconductor lithographic processThe SEM results indicated that the PZT etching problem was well resolved for the application of PZT thin film devices更多还原