【摘要】 选用 Ba(C2 H3O2 ) 2 、Sr(C2 H3O2 ) 2 · 1/ 2 H2 O和 Ti(OC4H9) 4为原材料 ,冰醋酸为催化剂 ,乙二醇乙醚为溶剂。用改进的溶胶 -凝胶技术在 Pt/ Ti/ Si O2 / Si基片上成功地制备出钙钛矿型结构的 (Ba1 - x Srx) Ti O3薄膜。该薄膜是制备铁电动态随机存取存储器、微波电容和非致冷红外焦平面阵列的优选材料 ;分析了薄膜的结构 ;测试了薄膜的介电和铁电性能。在室温 10 k Hz下 ,(Ba0 .73Sr0 .2 7) Ti O3薄膜介电系数和损耗分别为 30 0和 0 .0 3。在室温 1k Hz下 ,(Ba0 .95 Sr0 .0 5 ) Ti O3薄膜剩余极化强度和矫顽场分别为 3μC/ cm2和 5 0 k V/ c更多还原

【Abstract】 Ba 1 x Sr x )TiO 3(BST)ferroelectric thin films with perovskite structure on Pt/Ti/SiO 2/Si substrate have been prepared by improved Sol Gel technique.Barium acetate,strontium acetate and tetrabutyl tianate are used raw materials.Glacial acetic acid is used as a catalyst.Ethylene glycol monoethyl ether is used as a solvent.(Ba 1 x Sr x )TiO 3 thin films are excellent materials for preparing ferroelectric dynamic random access memory,microwave capacitors and uncooled infrared focal plane arrays.The dielectric and ferroelectric properties of (Ba 1 x Sr x )TiO 3 thin films were measured.The ε r and tan δ of(Ba 0 73 Sr 0 27 )TiO 3 thin films are 300 and 0 03,respectively,at room temperature and 10 kHz The P r and E c of (Ba 0 95 Sr 0 05 )TiO 3 thin films are 3 μC/cm 2 and 50 kV/cm,respectively,at room temperature and 1 kHz更多还原