【摘要】 以六方BN和石墨粉为原料,通过机械球磨的方法制备出非晶BCN粉,在1470 K,10-5Torr的条件下,对非晶BCN粉进行烧结,获得了块状非晶BCN化合物,对其电导率测量的结果表明:在从室温到560 K范围内,它属于半导体,能隙为0.11ev,在560 K～740 K内,它属于半金属。更多还原

【Abstract】 Amorphous BCN powders were prepared by mechanical milling with hexagonal boron nitride and graphite as starting material. A bulk amorphous BCN compound was produced by sintering the asmilled amorphous BCN powders in a vacuum of 10-5 Torr at a temperature of 1470 K. The conductivity measurement for the bulk amorphous BCN cmpound showed that it behaves as a semiconductor with band gap energy of 0.11 eV for temperatures ranging from room temperature to 560 K and a semimetal for temperatures between 560 and 740 K.更多还原