【摘要】 重点开展了稳态、瞬态X射线辐照引起的金属 氧化物 半导体 (CMOS)器件剂量增强效应relativedoseenhance menteffect(RDEF)研究 .通过实验给出辐照敏感参数随总剂量的变化关系 ,旨在建立CMOS器件相同累积剂量时Χ射线辐照和γ射线辐照的总剂量效应损伤等效关系 .在脉冲X射线源denseplasmafocus(DPF)装置上 ,采用双层膜结构开展瞬态翻转增强效应研究 ,获得了瞬态翻转剂量增强因子 .这些方法为器件抗X射线辐照加固技术研究提供了实验技术手段更多还原

【Abstract】 The results are presented with emphasis on the relative dose enhancement factor for complementary metal oxide semiconductor (CMOS) devices irradiated by steady state and transient pulsed X rays. With the help of experimental study, sensitive parameter threshold voltage as a function of irradiation dose was obtained. So the equivalent relation of total dose damage is eslablished by comparing the response of devices irradiated by 60Co γ rays and X rays. By employing the X ray transient pulsed sources, the research of X rays transient upset enhancement effects is carried out using bi laminate structure. Upset enhancement factor of X rays are measured. These methods are provided for X ray radiation hardening technology an effective evaluation method.更多还原