【摘要】 应用射频磁控共溅射方法在石英玻璃和抛光硅片上制备了InP SiO2 复合薄膜 ,并在几种条件下对这些薄膜进行退火 .X射线光电子能谱和卢瑟福背散射实验结果表明 ,复合薄膜中InP和SiO2 的化学组分都大体上符合化学计量配比 .X射线衍射和激光喇曼谱实验结果都证实了复合薄膜中形成了InP纳米晶粒 .磷气氛保护下的高温(5 2 0℃ )退火可以消除复合薄膜中残存的In和In2 O3 并得到了纯InP SiO2 纳米复合薄膜 .实验观察到了室温下纳米复合薄膜的明显的光学吸收边蓝移现象和光学非线性的极大增强更多还原

【Abstract】 InP/SiO 2 composite thin films have been deposited on hot substrates of slice of silica glass and polished silicon by a radio frequency magnetron co\|sputtering technique, and annealing under several conditions. Detailed analysis of the composition of the films by X\|ray photoelectron spectroscopy and Rutherford backscattering spectroscopy shows that the InP and SiO\-2 exist in normal stoichiometry as a whole. X\|ray diffraction patterns and Raman spectra of the films conform the presence of InP nanocrystals in the composite films. Very small amounts of extra indium and In\-2O\-3 have been removed and pure InP/SiO\-2 nanocomposite films have been obtained by annealing at high temperature (520℃) in over\|pressure of phosphorous vapor. Blue shifts of optical absorption spectra and great enhancement of optical nonlinearity of the films at room temperature have been observed.更多还原