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共溅射和离子注入制备的SiO2(Eu)薄膜中Eu3+到Eu2+的转变
THE TRANSITION FROM Eu3+TO Eu2+ IN SiO 2(Eu) THIN FILMS PREPARED BY ION IMPLANTATION AND CO\|SPUTTERING
【摘要】 采用共溅射方法和Eu离子注入热生长的SiO2 方法得到SiO2 (Eu)薄膜 ,Eu离子的浓度为 4%和 0 .5 % .对样品X射线吸收近边结构 (XANES)的研究和分析表明 ,在高温氮气中发生了Eu3+向Eu2 +的转变 .SiO2 (Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论
【Abstract】 Eu ions doped SiO 2 thin films, SiO 2(Eu), were prepared by co\|sputtering of SiO 2 and Eu 2O 3 and Eu ion implantation into thermally grown SiO 2 films. The Eu\| L 3\|edge X\|ray absorption near edge structure (XANES) spectra of SiO 2(Eu) films show a doublet absorption peak structure with energy difference of 7?eV, which indicates the conversion of Eu 3+ to Eu 2+ at high annealing temperature in N 2. The strong blue luminescence of SiO 2(Eu) films prepared by ions implantation after films annealed above 1100?℃ confirms the above argument.
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2001年03期
- 【分类号】TN304
- 【被引频次】2
- 【下载频次】84