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共溅射和离子注入制备的SiO₂（Eu）薄膜中Eu³⁺到Eu²⁺的转变

THE TRANSITION FROM Eu³⁺TO Eu²⁺ IN SiO 2（Eu） THIN FILMS PREPARED BY ION IMPLANTATION AND CO\|SPUTTERING

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【Author】 LIU FENG\|ZHEN ZHU MEI\|FANG (State Key Laboratory of Materials Chemistry and Applications, Department of Physics, Graduate School, University of Science and Technology of China, Beijing\ 100039, China) LIU TAO (Beijing Synchrotron Radiation Facilit

【机构】中国科学技术大学研究生院物理系!稀土化学及应用国家重点实验室；北京100039；中国科学院高能物理研究所同步辐射实验室!北京100039；中国科学院半导体研究所!北京100083；

【摘要】采用共溅射方法和Eu离子注入热生长的SiO2 方法得到SiO2 (Eu)薄膜 ,Eu离子的浓度为 4%和 0 .5 % .对样品X射线吸收近边结构 (XANES)的研究和分析表明 ,在高温氮气中发生了Eu3+向Eu2 +的转变 .SiO2 (Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论更多还原

【Abstract】 Eu ions doped SiO 2 thin films, SiO 2(Eu), were prepared by co\|sputtering of SiO 2 and Eu 2O 3 and Eu ion implantation into thermally grown SiO 2 films. The Eu\| L 3\|edge X\|ray absorption near edge structure (XANES) spectra of SiO 2(Eu) films show a doublet absorption peak structure with energy difference of 7?eV, which indicates the conversion of Eu 3+ to Eu 2+ at high annealing temperature in N 2. The strong blue luminescence of SiO 2(Eu) films prepared by ions implantation after films annealed above 1100?℃ confirms the above argument.更多还原