【摘要】 采用扫描隧道显微镜 (STM )在 3 phenyl 1 ureidonitrile (PUN)有机单体薄膜上进行了超高密度信息存储的研究 .通过在STM针尖和高定向裂解石墨 (HOPG)衬底之间施加一系列的电压脉冲 ,在薄膜上写入了一个稳定的 5× 6信息点阵 ,信息点的大小是 0 8nm .电流 电压 (I V)曲线表明 ,施加电压脉冲前后薄膜的导电性质发生了变化 .信息点的写入机制可能是强电场作用下引发的PUN分子的局域聚合 ,从而导致薄膜由高电阻态向低电阻态转变 .更多还原

【Abstract】 Ultrahigh\|density data storage on a 3\|phenyl\|1\|ureidonitrile (PUN) thin film was performed using a scanning tunneling microscope. The recorded marks of 0.8?nm in diameter were obtained when voltage pulses of 4 V for 10ms were applied between the STM tip and highly ordered pyrolytic graphite substrate. The current\|voltage relations at the local regions of the films indicate that the recorded region is conductive and the unrecorded region is in a high impedance state. A possible mechanism of this data storage was suggested and discussed.更多还原