【摘要】 利用非平衡磁控溅射法 ,用一对石墨溅射靶 ,以N2 ,Ar为工作气体 ,在Si(10 0 )衬底上溅射生长CNx薄膜 .X光电子能谱分析表明薄膜中的C ,N原子以sp3,sp2 杂化电子轨道成键形成化合物 .氮碳原子比比值为 1.0 6 ,1.2 4,傅里叶红外分析也证明了C—N的存在 .X射线衍射谱显示薄膜中含有 β C3N4 晶粒 .实验证明 ,非平衡磁控溅射法是合成C3N4 薄膜的有效方法 .更多还原

【Abstract】 CN_x films were deposited on Si（1 0 0） substrates by UMS（unbalanced magnetron sputtering） system, which utilized graphite as target material, nitrogen as reactive gas, and argon as sputtering gas. The ratios of N/C are 1.06,1.24. XPS and FTIR analysises show the existence of C—N single bond in the films,and XRD peaks mean that β C₃N₄ existes in the thin films .On the whole, the UMS method is an effective way to prepare the C₃N₄ thin films.更多还原