【摘要】 以正硅酸乙酯（ＴＥＯＳ）和八氟环丁烷（Ｃ４Ｆ８）为原料，采用等离子体增强化学气相淀积（ＰＥＣＶＤ）方法制备了氟碳掺杂的氧化硅薄膜（ＳｉＣＯＦ）．样品的Ｘ射线光电子能谱（ＸＰＳ）和傅立叶变换红外光谱（ＦＴＩＲ）分析表明薄膜中含有Ｓｉ－Ｆ、Ｓｉ－Ｏ、Ｃ－Ｆ、Ｃ－ＣＦｘ、ＣＦ2等构型．刚淀积的薄膜的折射率约为１．４０．对暴露在空气中以及在不同温度下退火后薄膜的折射率做了测量，并对其变化机理进行了讨论，同时表明了理想的淀积温度应是３００℃．更多还原

【Abstract】 Fluorine and carbon-doped silicon oxide films (SiCOF) were deposited from tetraox- ethylsilane (TEOS) and octafluorocyclobutane (C4F8) by plasma-enhanced chemical yapor deposi- tion (PECVD). The study of X-ray photoelectron spectrum (XPS) and Fourier transform infrared spectrum (FTIR) of the film reveals that there are Si-F, Si-O, C-F, C-CFx, CF2, etc., configurations co-existing in the film. The refractive index of the as-deposited film is about 1.40. The refractive index of the film was measured as a function of the time of exposure to the atmosphere and an- nealing temperatures, and the mechanism of the change in the refractive index was discussed. The results show that an ideal deposition temperature is about 300°C.更多还原