【摘要】 在Ｂａ（Ｔｉ１－ｙＺｒｙ）Ｏ３中，Ｙｂ２Ｏ３的不同掺杂方式引起了材料性能的显著变化．采用 Ｂａ（Ｔｉ１－ｙＺｒｙ）Ｏ３合成后Ｙｂ２Ｏ３的适量掺杂，陶瓷介温峰明显地移动，介电常数大幅度提高， 获得了室温介电常数＞２５０００，１２５０℃左右烧成，符合Ｙ５Ｖ标准的高介材料．合成后掺杂的 Ｙｂ２Ｏ３，使材料介电常数提高，可能与施主掺杂引入的局域化电子有关．合成前掺杂Ｙｂ２Ｏ３ 的样品，介电常数较低，移峰效率偏小，可能是Ｙｂ的Ｔｉ位受主取代使施主引入的局域化电子 得到补偿的结果．更多还原

【Abstract】 A distinct diversification of dielectric character of Ba(Ti1-yZry)O3 ceramics doped with Yb2O3 in different doping style was observed. When adapted content of Yb2O3 is added after synthesis of Ba(Ti1-yZry)O3, the ferroelectric phase transition points of the ceramics are shifted distinctly, and the dielectric constants at these points increase greatly. This doping method at 1250℃ results in the sample with a high dielectric constant over 25000 at room temperature and according with Y5V specifications. The enhancement of dielectric constant of Ba(Ti1-yZry)O3 caused by the doping of Yb2O3 after synthesis is associated with the localization of electrons produced by donor doping. Doping by Yb2O3 before synthesis results in the sample with a relative low dielectric constant and a weak efficiency of Curie point shifting. This is due to the compensation of localized-electrons by acceptors that introduced by the doping of Yb3+ replacing Ti site in perovskite lattice.更多还原