【摘要】 采用 X射线掠射法和轮廓法 ,测量了单晶 Si基板上用磁控溅射法制备的 Ni Ti形状记忆合金薄膜的残余应力 ,分析了其与薄膜厚度以及晶化处理温度等工艺条件的关系 .结果表明 :该薄膜中的残余应力主要来源于薄膜同基板材料的膨胀系数和晶格参数不匹配 ;薄膜厚度越大 ,残余应力越小 ;晶化处理温度对因热胀系数差异带来的热拉应力因马氏体相变而致的相变压应力均有不同程度的影响 .更多还原

【Abstract】 Residual stress in NiTi shape memory alloy thin film was measured by X ray glancing and contour method separately. The effect of annealing temperature and film thickness on residual stress was also analyzed. The derivative of the residual stress is mainly the dismatch of expansion coefficient and crystal parameters. The thicker the film is, the lower the residual stress is. And the influence of annealing temperature was also found to be caused by the expansion coefficient difference and martensitic transition.更多还原