【摘要】 以碳酸铯和硼酸为原料采用泡生法生长出三硼酸铯 (化学式CsB3 O5,简称CBO)晶体 ,首次报道了利用同步辐射白光X射线形貌术对CBO晶体的 (0 0 1)面、(0 10 )面和 (10 0 )面进行了观察。观察结果表明 ,CBO晶体的主要缺陷是生长层。缺陷形成的原因是晶体生长炉内热流的非稳态对流和温度振荡导致晶体的微观生长率随时间变化 ,溶质粒子不能均匀分布在晶体生长前沿更多还原

【Abstract】 CsB 3O 5(CBO) crystals were grown by Kyropoulos methods from Cs 2CO 3 and H 3BO 3 as initial materials.The growth defects in CBO crystal at (001),(010)and (100) directions were investigated by synchrotron radiation X ray topography method.The main defects in CBO crystals were growth layers and the main cause of the growth defects were the shaky thermal convection and oscillation of temperatrue,which brought about the change of microcosmic growth rate with the time and the disarrangement of particles on the surface of crystals.更多还原