【摘要】 用提拉法生长了质量较好的铁电 -铁弹 β′ Gd2 (MoO4 ) 3 晶体。研究了晶体中包裹物的形成原因及晶体转速、提拉速度、温度梯度等对包裹物的影响 ,分析了晶体开裂的类型及克服的方法。指出了用提拉法生长高质量 β′ Gd2 (MoO4 ) 3 晶体的合适工艺参数。用偏光显微镜对晶体中的畴结构进行了观察 ,发现样品中存在宽畴和细畴两种类型 ,结合同一样品减薄实验确定了晶体中的宽畴为铁电畴 ,细畴为铁弹畴。更多还原

【Abstract】 The ferroelectric-ferroelastic β′-Gd 2(MoO 4) 3 crystals have been grown by using Czochralski technique.The causes of forming inclusions and the influences of rotating speed,pulling rate and temperature gradient on the inclusions formed have been investigated.The types of the crystal cracks were described.The compatible growth parameters for high quality β′-Gd 2(MoO 4) 3 were given out.Two types of domain structure (broad and narrow) have been found in the β′-Gd 2(MoO 4) 3 crystal samples of orientation using microscope.The broad domain and the narrow domain have been confirmed to be the ferroelectric domain and the ferroelastic domain respectively by the experiment of thinning down with a sample.更多还原