【摘要】 用射频磁控溅射在衬底温度（Ｔｓ）为 ４００℃和室温（ＲＴ）两种情形制备了Ｃｏ１－ｘＳｉｘ（０．０≤Ｘ≤０．３４）合金膜．Ｘ射线衍射结果表明在这些合金膜中出现了不同程度的ｈｃｐ（００２）取向．在室温下沉积的薄膜中，仅在ｘ＝０．０时有明显的ｈｃｐ（００２）取向．在４００℃下沉积的薄膜中，随着硅含量ｘ的增加，ｈｃｐ（００２）取向先是增强，继而在Ｘ＝０．３４时消失．相应与此的４００℃下沉积的薄膜的θｋ（Ｈ）、（Ｍ（Ｈ））回线在ｘ＝０．２３时出现了磁滞现象（Ｈｃ≈６４ｋＡ／ｍ），并且有大约２０％的比剩余克尔旋转（比剩余磁化强度）．同时，当Ｘ≤０．２３，硅的加入使得钻硅合金的克尔旋转在蓝光及近紫外区相比于纯钻来说有所加强，其值约为－０．３°～－０．４°．更多还原

【Abstract】 Co1-xSix(0. 0≤<x≤0. 34) films were deposited at glass substrates by rf magnetron sputtering at 400℃ and room temperature. Moderate hcp (002) Orientation is found in the XRD patterns of these films. For the films grown at room temperaure, the hcp(002) orientation only appears in the film with x = 0. 23. For the films grown at 400℃, the orientation is enhanced with x, then disappears at x = 0. 34. Corresponding to the hcp (002) orientation, a remnat Kerr rotation (a remnant magnetization), which is 20% of saturated Kerr rotation (saturated magnetization), and a coercivity (about 64 kA/m) are found in Kerr rotation hysteresis (magnetization hysteresis) for Co77Si23 film grown at 400℃. While Si concentration x is below 0. 23, the Kerr rotation in Co-Si film is enhanced, compared with that in Co film in blue and near-violet light range, with a value about - 0. 30° ~ - 0. 40°.更多还原