【摘要】 对两类未故意掺杂GaN样品 ,用He-Cd激光器 32 5nm线激发 ,进行光致发光性能测试 ,发现表面呈浅白色的样品出现一个新的发光峰 ,该峰在 30 0K时位于 3.146eV处 对此类样品进行变激发密度光致发光谱测试 ,发现此峰的峰位不随激发密度的变化而发生移动 ,其发光峰强与激发密度呈超线性关系 据此 ,把这一发光峰归结为导带电子到一种新受主能级的复合 ,并测得此受主离化能为 ( 2 99± 10 )meV更多还原

【Abstract】 Two kinds of undoped GaN films were characterized by photoluminescence(PL).PL was excited using the 325 nm line of a 15 mW He-Cd laser.A new emission peak around 3.146 eV at room temperature was observed in the films with greyish white surface.The peak positions of the 3.146 eV was independent of excitation density,but the growth in intensity with increasing excitation density was seen to be superlinear,so we assigned it to the recombination from the electron in conduction band to the acceptor level of a new kind of acceptor .The new acceptor ionization energy was determined as (299±10)meV.更多还原