【摘要】 研究了 VLP/ CVD低温硅外延生长技术。利用自制的 VLP/ CVD设备 ,在低温条件下 ,成功地研制出晶格结构完好的硅同质结外延材料。扩展电阻、X射线衍射谱和电化学分布研究表明 ,在低温下 (T<80 0°C)应用 VLP/ CVD技术 ,可以生长结构完好的硅外延材料 ;且材料生长界面的杂质浓度分布更陡峭更多还原

【Abstract】 Low temperature silicon epitaxy by very low pressure chemical vapor deposition technique has been investigated in the paper. The very low pressure chemical vapor deposition system made by Nanjing Electronic Device Institute is used to grow Si epitaxial wafers. Silicon epitaxial layers with high crystalline perfection, very good electric property and abrupt dopant transitions have been obtained.更多还原