【摘要】 用椭圆偏振仪测量了O+2 注入Si后的椭偏参数Φ和Δ ,给出了离子注入辐射损伤与注入剂量和注入能量的关系 .同时 ,对离子注入片在N2 气氛中进行等时热退火 ,测量了Φ和Δ ,给出了O+2 注入Si的退火特性 .结果表明 :O+2 注入Si的退火特性曲线 ,对不同的注入剂量和注入能量分别为“V”形和“W”形 .对此结果 ,我们进行了初步地分析和讨论更多还原

【Abstract】 The parameters and elliptically polarizjed light have been measured in O + 2 implantation into Si with different energy and doses. The functions of the radioation damage with implantation energy and dose have been given. Meanwhile, the O + 2 implantation into Si has been thermally annealed by egual duration in amealing furnace with gas. Φ and Δ have been measured for annealing behaviours of O + 2 implantation into Si. The result shows: the curves of annealing behaviours at different implantation energy and dose are in the shapes of "V" and "W".更多还原