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半导体发光二极管的研究与分析

Research on and Analysis of Semiconductor Luminescence Diode

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【作者】 沈桂芬姚朋军高嵩刘兴辉吕品

【Author】 SHEN Guifen, YAO Pengjun, GAO Song, LIU Xinghui, LV Pin Department of Physics, Liaoning University, Shenyang 110036, China

【机构】 辽宁大学物理系!辽宁沈阳110036

【摘要】 在简介半导体发光二极管的辐射复合基础上 ,详细讨论了包括Ⅲ—Ⅴ族、Ⅱ—Ⅵ族化合物半导体材料和多孔硅 (PS)等新发光材料在内的各种发光材料的发光机理、发光二极管的结构与特性 .并介绍了半导体发光二极管在近代科学中的应用

【Abstract】 After a brief introduction to the excitation of semiconductor luminescence diode, the light emitting machenisms of various new luminescence materials, including Ⅲ Ⅴ and Ⅱ Ⅴ semiconductor compounds and PS, the structures of different luminescence diodes, and their properties were discussed, and the application of semiconductor luminescence diode in modern science was presented.

  • 【文献出处】 辽宁大学学报(自然科学版) ,