【摘要】 对分子束外延生长的 Ga NAs外延层进行了拉曼散射研究 ,观测到了由于导带中的 E+态所引起的共振散射和由此产生的布里渊区非Γ点声子的拉曼峰 .清晰地观测到了随氮含量增大 ,氮在 Ga As中的局域模振动演变为Ga NAs中的类 Ga N晶格声子带模 .通过样品在 850度快速热退火前后拉曼谱的对比 ,推测性地指认了两个与氮的成对或成团效应有关的振动峰更多还原

【Abstract】 The Raman scattering spectra of MBE grown GaNAs epilayers were investigated. The resonant enhancement of Raman scattering due to the E + states in the conduction band was observed and the Raman peaks related to the phonons at non Γ points of the Brillouin Zone were detected.It was clearly seen that the local vibrational mode induced by nitrogen impurities evolves to the GaN like lattice phonon mode when the nitrogen content increases. By comparing the Raman spectra measured before and after 850℃ rapid thermal annealing, it was tentatively suggested that two weak peaks were induced by the pairing or clustering effect of nitrogen.更多还原