【摘要】 根据传热学理论分析了内含缺陷和脱粘的材料表面温差 ,给出了键合硅片表面温差与缺陷的深度、厚度及加热时间之间关系的计算结果 ,介绍了利用红外热像仪检测材料内部脱粘的方法。更多还原

【Abstract】 Surface temperature of specimen consisted of complex material contained flow accoding to theory of heat transfer are calculated. The computation results that surface temperature difference of bounding on silicon wafers versus different depth of defect and heating time are given.The methods for testing delamination in complex material are introduced.更多还原